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SiC单晶片切割力建模与自适应控制

李淑娟 杜思明 王鑫 张恒

李淑娟, 杜思明, 王鑫, 张恒. SiC单晶片切割力建模与自适应控制[J]. 机械科学与技术, 2015, 34(3): 423-428. doi: 10.13433/j.cnki.1003-8728.2015.0320
引用本文: 李淑娟, 杜思明, 王鑫, 张恒. SiC单晶片切割力建模与自适应控制[J]. 机械科学与技术, 2015, 34(3): 423-428. doi: 10.13433/j.cnki.1003-8728.2015.0320
Li Shujuan, Du Siming, Wang Xin, Zhang Heng. Modeling and Adaptive Control of the Cutting Force for SiC Monocrystal Wafer[J]. Mechanical Science and Technology for Aerospace Engineering, 2015, 34(3): 423-428. doi: 10.13433/j.cnki.1003-8728.2015.0320
Citation: Li Shujuan, Du Siming, Wang Xin, Zhang Heng. Modeling and Adaptive Control of the Cutting Force for SiC Monocrystal Wafer[J]. Mechanical Science and Technology for Aerospace Engineering, 2015, 34(3): 423-428. doi: 10.13433/j.cnki.1003-8728.2015.0320

SiC单晶片切割力建模与自适应控制

doi: 10.13433/j.cnki.1003-8728.2015.0320
基金项目: 

国家自然科学基金项目(51175420)与陕西省教育厅基金项目(00S1409)资助

详细信息
    作者简介:

    李淑娟(1968-),教授,博士生导师,研究方向为脆性材料精密加工和控制,shujuanli2009@gmail.com

Modeling and Adaptive Control of the Cutting Force for SiC Monocrystal Wafer

  • 摘要: SiC单晶因优良的物理和机械性能而大量用于大功率器件和IC行业。但由于材料的高硬度和高脆性,使其加工过程变得很困难。为此,分析了SiC单晶片切割过程,建立切割过程模型,通过F检验法进行系统阶次辨识,采用遗忘因子递推最小二乘算法在线估计模型参数,建立进给量与切割力的差分方程,设计基于最小方差自校正的切割力控制器,并进行实验验证。结果表明:控制器能够很好的跟踪不同信号,具有良好的鲁棒性,提高了SiC单晶片的加工效率和表面质量。
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出版历程
  • 收稿日期:  2013-08-26
  • 刊出日期:  2015-03-05

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