SiC单晶片切割力建模与自适应控制

李淑娟; 杜思明; 王鑫; 张恒

doi:10.13433/j.cnki.1003-8728.2015.0320

SiC单晶片切割力建模与自适应控制

doi: 10.13433/j.cnki.1003-8728.2015.0320

1.
西安理工大学机械与精密仪器工程学院, 西安 710048

基金项目:

国家自然科学基金项目（51175420）与陕西省教育厅基金项目（00S1409）资助

详细信息

作者简介:
李淑娟（1968-），教授，博士生导师，研究方向为脆性材料精密加工和控制，shujuanli2009@gmail.com

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- 文章访问数: 132
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- 被引次数: 0
出版历程
- 收稿日期: 2013-08-26
- 刊出日期: 2015-03-05

Modeling and Adaptive Control of the Cutting Force for SiC Monocrystal Wafer

1.
School of Mechanical and Instrumental Engineering, Xi'an University of Technology, Xi'an 710048

摘要

摘要: SiC单晶因优良的物理和机械性能而大量用于大功率器件和IC行业。但由于材料的高硬度和高脆性，使其加工过程变得很困难。为此，分析了SiC单晶片切割过程，建立切割过程模型，通过F检验法进行系统阶次辨识，采用遗忘因子递推最小二乘算法在线估计模型参数，建立进给量与切割力的差分方程，设计基于最小方差自校正的切割力控制器，并进行实验验证。结果表明：控制器能够很好的跟踪不同信号，具有良好的鲁棒性，提高了SiC单晶片的加工效率和表面质量。
- SiC单晶片 /
- 系统辨识 /
- F检验 /
- 自适应控制
Abstract: For having good physical and mechanical properties, SiC monocrystal is widely used in high-power devices and IC industry. However, the high hardness and brittleness make the cutting process of SiC monocrystal very difficultly. The single input and single output system consists of part feed rate and cutting force are analyzed; a minimum variance self-tuning controller is designed to make sure the process will be stable and more efficiency. Firstly, system order is determined through F-test. Then the system model parameters are estimated, the differential equation between the cutting force and the part feed rate is developed. The experiments with reference force (square wave and sine wave signal) are conducted and the results show that the proposed cutting force controller can control the feed rate well to track the different reference cutting forces, and the proposed controller has a robotic ability. The results indicate that the proposed cutting force controller can improve the surface integrity for SiC monocrystal wafer and keep the cutting process stable.
- adaptive control /
- cutting /
- design of experiments /
- differential equations

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参考文献(13)

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