SiC单晶片研磨材料去除率研究

袁启龙; 付慧; 李淑娟; 姜陶然; 杨明顺

doi:10.13433/j.cnki.1003-8728.20180097

SiC单晶片研磨材料去除率研究

doi: 10.13433/j.cnki.1003-8728.20180097

西安理工大学机械与精密仪器工程学院, 西安 710048

基金项目:

国家自然科学基金项目 51575442

陕西省教育厅重点实验室项目 13JS071

国家自然科学基金项目 51175420

详细信息

作者简介:
袁启龙(1970-), 副教授, 硕士生导师, 研究方向为先进制造技术, YuanQL@xaut.edu.cn

中图分类号: TH145.9
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- 被引次数: 0
出版历程
- 收稿日期: 2017-09-11
- 刊出日期: 2018-12-05

Study on Material Removal Rate in Lapping of SiC Single Crystal Wafer

School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China

摘要

摘要: 碳化硅（SiC）单晶片属于难加工材料，在使用之前必须要进行研磨与抛光。材料去除率（Material removal rate，MRR）是衡量SiC单晶片研磨与抛光效率的重要因素。针对传统研磨与抛光过程中考虑磨粒摩擦磨损时建立的材料去除率公式对材料去除的不足，考虑SiC单晶片研磨时磨粒挤压嵌入阶段的材料去除，建立了新型的材料去除率公式。根据SiC单晶片、磨粒与研磨盘之间的接触状态，推导出了包含嵌入阶段和摩擦磨损阶段材料去除的新型MRR数学模型；结合材料的物理特性（如硬度与弹性模量等），进行研磨实验。实验结果与模型预测结果表明，新型材料去除率公式的预测结果更接近实际情况。
- SiC单晶片 /
- 研磨 /
- 磨粒 /
- 材料去除率
Abstract: Silicon carbide (SiC) single crystal wafer is difficult to be machined, which must be lapped and polished. The material removal rate (MRR) is an important factor in the lapping and polishing of SiC single crystal wafer, and which has great significance for SiC single crystal wafer processing. In traditional process of grinding and polishing, the deficiency of material removal rate (MRR) model is due to considering friction and wear of abrasive particles. Considered the material removal of the lapping particles in the extrusion stage, a new model for material removal rate of SiC single crystal wafer is established. According to the contact state between SiC single crystal wafer, particles and pad, a new model for MRR is established contain embedded phases and the friction and wear of the material removal rate. Combing the hardness and modulus of elasticity for grinding experiments, the experimental results are compared with the predicted. It is concluded that the predicted via the present MRR model is closer to the physical truth.
- SiC single crystal wafer /
- lapping /
- abrasive /
- MRR

HTML全文

图 1 单颗磨粒去除晶片材料示意图

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图 2 单颗磨粒嵌入晶片深度的横截面模型

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图 3 球形磨粒与晶片和研磨盘接触去除材料模型

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图 4 研磨盘硬度与接触比对MRR的影响

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图 5 磨粒粒度与偏差对MRR的影响

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图 6 不同压强下研磨盘转速对MRR的影响

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图 7 金刚石研磨膏

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图 8 BS/BT电子天平

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图 9 不同转速下实验与理论MRR对比

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图 10 不同压强下实验与理论MRR对比

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表 1 不同转速下的实验与预测MRR结果(压强为18.8 kPa)

研磨盘转速／(r·min^-1)		10	20	30	40	50	60
实验值	MRR／(nm·min^-1)	46.633	95.935	131.236	175.544	225.935	271.236
改进前^[11]	MRR／(nm·min^-1)	40.250	81.783	110.513	145.838	185.773	220.119
改进前^[11]	相对误差／％	13.688	14.752	15.791	16.922	17.776	18.846
改进后	MRR／(nm·min^-1)	43.856	89.923	121.910	161.867	206.945	246.645
改进后	相对误差／％	5.954	6.627	7.106	7.791	8.405	9.066

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表 2 不同压强下的MRR实验与预测MRR结果(转速为40 r／min)

研磨压强／kPa		5	8	11	14	17	20
实验值	MRR／(nm·min^-1)	43.353	73.113	104.412	133.448	167.584	197.204
改进前^[11]	MRR／(nm·min^-1)	38.638	64.699	91.665	116.116	145.008	169.124
改进前^[11]	相对误差／％	10.876	11.509	12.209	12.988	13.472	14.239
改进后	MRR／(nm·min^-1)	41.225	69.108	97.782	124.124	154.630	180.742
改进后	相对误差／％	4.908	5.478	6.349	6.987	7.730	8.348

下载: 导出CSV

参考文献(17)

[1]	Deng H, Endo K, Yamamura K. Damage-free and atomically-flat finishing of single crystal SiC by combination of oxidation and soft abrasive polishing[J]. Procedia CIRP, 2014, 13:203-207 doi: 10.1016/j.procir.2014.04.035
[2]	张玉明, 汤晓燕, 张义门.SiC功率器件的研究和展望[J].电力电子技术, 2008, 42(12):60-62 doi: 10.3969/j.issn.1000-100X.2008.12.022 Zhang Y M, Tang X Y, Zhang Y M. Study and perspective on SiC power devices[J]. Power Electronics, 2008, 42(12):60-62(in Chinese) doi: 10.3969/j.issn.1000-100X.2008.12.022
[3]	王军喜, 刘喆, 魏同波, 等.第3代半导体材料在光电器件方面的发展和应用[J].新材料产业, 2014, (3):18-20 doi: 10.3969/j.issn.1008-892X.2014.03.005 Wang J X, Liu Z, Wei T B, et al. Development and application of third generation semiconductor materials in optoelectronic devices[J]. Advanced Materials Industry, 2014, (3):18-20(in Chinese) doi: 10.3969/j.issn.1008-892X.2014.03.005
[4]	叶恒宇, 覃寿同, 王栋, 等.磁力研磨调质45钢的工艺参数和表面形貌研究[J].机械科学与技术, 2017, 36(8):1292-1297 http://journals.nwpu.edu.cn/jxkxyjs/CN/abstract/abstract6773.shtml Ye H Y, Qin S T, Wang D, et al. Study on processing parameters and surface morphology of quenched and tempered 45 steel in magnetic abrasive finishing[J]. Mechanical Science and Technology for Aerospace Engineering, 2017, 36(8):1292-1297(in Chinese) http://journals.nwpu.edu.cn/jxkxyjs/CN/abstract/abstract6773.shtml
[5]	Zhou L B, Shimizu J, Shinohara K, et al. Three-dimensional kinematical analyses for surface grinding of large scale substrate[J]. Precision Engineering, 2003, 27(2):175-184 doi: 10.1016/S0141-6359(02)00225-8
[6]	Jin X L, Zhang L C. A statistical model for material removal prediction in polishing[J]. Wear, 2012, 274-275:203-211 doi: 10.1016/j.wear.2011.08.028
[7]	Li P Y, Wang Z J, Li X Y, et al. Elasto-plastic indentation of a half-space by a rigid sphere under normal and torque loading[J]. Tribology International, 2013, 62:141-148 doi: 10.1016/j.triboint.2013.02.015
[8]	Xu W H, Lu X C, Pan G S, et al. Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles; pad and sapphire substrate during chemical mechanical polishing (CMP)[J]. Applied Surface Science, 2011, 257(7):2905-2911 doi: 10.1016/j.apsusc.2010.10.088
[9]	刘折, 赵波, 郑友益, 等.超声ELID复合磨削陶瓷材料高效去除机理的仿真研究[J].兵器材料科学与工程, 2014, 37(5):27-31 doi: 10.3969/j.issn.1004-244X.2014.05.007 Liu Z, Zhao B, Zheng Y Y, et al. Simulation on mechanism of ceramic removal by ultrasonic ELID composite grinding[J]. Ordnance Material Science and Engineering, 2014, 37(5):27-31(in Chinese) doi: 10.3969/j.issn.1004-244X.2014.05.007
[10]	胡海明, 李淑娟, 高晓春, 等.SiC单晶片研磨过程材料去除率仿真与试验研究[J].兵工学报, 2013, 34(9):1125-1131 http://d.old.wanfangdata.com.cn/Periodical/bgxb201309011 Hu H M, Li S J, Gao X C, et al. Simulation and experiment of MRR in lapping process of SiC monocrystal wafers[J]. Acta Armamentarii, 2013, 34(9):1125-1131(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/bgxb201309011
[11]	Pohl M C, Griffiths D A. The importance of particle size to the performance of abrasive particles in the CMP process[J]. Journal of Electronic Materials, 1996, 25(10):1612-1616 doi: 10.1007/BF02655584
[12]	Kumar A, Mahapatra M M, Jha P K. Modeling the abrasive wear characteristics of in-situ synthesized Al-4.5%Cu/TiC composites[J]. Wear, 2013, 306(1-2):170-178 doi: 10.1016/j.wear.2013.08.013
[13]	Uhlmann E, Doits M, Schmiedel C. Development of a material model for visco-elastic abrasive medium in Abrasive Flow Machining[J]. Procedia CIRP, 2013, 8:351-356 doi: 10.1016/j.procir.2013.06.115
[14]	Bielmann M, Mahajan U, Singh R K. Effect of particle size during tungsten chemical mechanical polishing[J]. Electrochemical and Solid-State Letters, 1999, 2(8):401-403 doi: 10.1149/1.1390851
[15]	许迪初, 汪久根.粗糙表面的弹塑性接触研究[J].摩擦学学报, 2016, 36(3):371-379 http://d.old.wanfangdata.com.cn/Periodical/zgjxgc200722024 Xu D C, Wang J G. On deterministic elastoplastic contact for rough surfaces[J]. Tribology, 2016, 36(3):371-379(in Chinese) http://d.old.wanfangdata.com.cn/Periodical/zgjxgc200722024
[16]	Zhao Y W, Chang L. A micro-contact and wear model for chemical-mechanical polishing of silicon wafers[J]. Wear, 2002, 252(3-4):220-226 doi: 10.1016/S0043-1648(01)00871-7
[17]	Luo J F, Dornfeld D A. Material removal mechanism in chemical mechanical polishing:theory and modeling[J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(2):112-133 doi: 10.1109/66.920723