基于RSM的SiC单晶片表面粗糙度预测及参数优化

万波; 李淑娟

基于RSM的SiC单晶片表面粗糙度预测及参数优化

万波,
李淑娟

1.
西安理工大学机械与精密仪器学院西安 710048

基金项目:

国家自然科学基金项目(51175420)

陕西省科技攻关项目(2010K09-01)

陕西省教育厅基金项目(11JK0849/11JS074)资助

详细信息

作者简介:
万波(1986-)，硕士研究生，研究方向为脆性材料加工过程建模与分析，wanbolang@163.com

计量
- 文章访问数: 224
- HTML全文浏览量: 30
- PDF下载量: 3
- 被引次数: 0
出版历程
- 收稿日期: 2011-12-01
- 刊出日期: 2015-06-10

Predicting Surface Roughness of SiC Monocrystal Wafer and Optimizing Its Parameters Using Response Surface Method

Wan Bo,
Li Shujuan

1.
School of Mechanical and Instrumental Engineering,Xi'an University of Technology,Xi'an 710048

摘要

摘要: 通过响应面分析法(RSM)对超声振动辅助金刚石线锯切割SiC单晶体的工艺参数进行分析和优化。采用中心组合设计实验,考察线锯速度、工件进给速度、工件转速和超声波振幅这4个因素对SiC单晶片表面粗糙度值的影响,建立了SiC单晶片表面粗糙度的响应模型,进行响应面分析,采用满意度函数(DFM)确定了切割SiC单晶体的最佳工艺参数,验证试验表明该模型能实现相应的硬脆材料切割过程的表面粗糙度预测。
- 响应曲面法(RSM) /
- SiC单晶片 /
- 表面粗糙度预测 /
- 参数优化
Abstract: The response surface method (RSM) is used to study the influence of the process parameters on the surface roughness of SiC monocrystal wafer under wire saw with the ultrasonic vibration machining process.The centralcomposite design (CCD) is used to design the experimental scheme.The wire saw's velocity, part feed rate, partspeed and ultrasonic amplitude are the factors that influence the SiC surface roughness.An empirical model hasbeen developed for predicting the surface roughness for machining the SiC monocrystal wafer.The response surfaceregression and variance analysis are used to study the effects of process parameters.The optimum machining condition for minimizing the surface roughness is determined by using the desirability function approach.The influence ofdifferent parameters on machining the SiC monocrystal wafer has been analyzed in detail.The verification experimental results show that this model can well predict the surface roughness for machining monocrystal materials.
- response surface method /
- SiC monocrystal wafer /
- surface roughness prediction /
- parameter optimization

HTML全文

参考文献(14)

[1]	Philip G Neudeck. Progress in silicon carbide semiconductor electronics technology [J]. Journal of Electronic Materials，1995，(24): 283～288
[2]	王利杰, 冯玢等. 3 英寸半绝缘 4H-SiC 单晶的研制[J]. 半导体材料, 2011, 36(1): 8～10
[3]	Montgomery D C. Design and Analysis of Experiments. Posts and Telecom Press, 2009
[4]	Ohata T Y. Nakamura, E. Nakamachi. Development of optimum process design system for sheet fabrication using response surface method[J]. Journal of Materials Processing Technology，2003, 144(1): 667～672
[5]	袁人炜等. 响应曲面法预测铣削力模型及影响因素的分析[J]. 上海交通大学学报, 2001, 35 (7): 1040～1045
[6]	Giovanni M. Response surface methodology and product optimization [J]. Food Technology, 1983, 37(11): 41～45
[7]	Godfrey O U, Kumar S. Response surface methodology-based approach to CNC drilling operations[J]. Journal of Materials Processing Technology, 2006, 171: 41～47
[8]	Francis F, Abdulhameed S, Nampoothiri K M. Use of response surface methodology for optimizing process parameters for the production of a-amylase by as-pergillus oryzae [J]. Biochemical Engineering Joumal, 2003, 15(2): 107～115
[9]	Ambat I P, Ayyanna C. Optimizing medium constituents and fermentation conditions for citric acid production from palmyra jaggery using response surface method[J]. World Journal of Microbiology and Biotechnology, 200l, 7(4): 331～335
[10]	梁永收等. 基于响应曲面法的 GH4169 铣削力预测模型研究[J]. 机械科学与技术, 2010, 29(11): 1547～1552
[11]	贺连芳等. 基于响应曲面方法的热冲压硼钢 B1500HS 淬火工艺参数优化木[J]. 机械工程学报, 2011, 47(8): 77～82
[12]	Palanikumar K N, et al. Surface roughness parameters optimization in machining A356 /SiC /20p metal matrix composites by PCD tool using response surface methodology and desirability function[J]．Machining Science and Technology, 2008，12:529～545
[13]	Jinshan L, Cuiqing Y M, Yan L. Medium optimization by combination of response surface methodology and desirability function: an application in glutamine production [J]. International Journal of Advanced Manufacturing Technology, 2007，74:563～571
[14]	Shew Y W, Kwong C K. Optimization of the plated through hole process using experimental design and response surface methodology[J]. International Journal of Advanced Manufacturing Technology, 2002, 20: 758～764