Multi-objective Optimization for WEDM of Single-crystal Silicon

Lu Xiong; Li Shujuan; Xin Bin; Li Zhipeng

doi:10.13433/j.cnki.1003-8728.20180030

Volume 37 Issue 8

Aug. 2018

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Article Navigation > Mechanical Science and Technology for Aerospace Engineering > 2018 > 37(8): 1253-1259

Lu Xiong, Li Shujuan, Xin Bin, Li Zhipeng. Multi-objective Optimization for WEDM of Single-crystal Silicon[J]. Mechanical Science and Technology for Aerospace Engineering, 2018, 37(8): 1253-1259. doi: 10.13433/j.cnki.1003-8728.20180030

Citation:

Lu Xiong, Li Shujuan, Xin Bin, Li Zhipeng. Multi-objective Optimization for WEDM of Single-crystal Silicon[J]. Mechanical Science and Technology for Aerospace Engineering, 2018, 37(8): 1253-1259. doi: 10.13433/j.cnki.1003-8728.20180030

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Multi-objective Optimization for WEDM of Single-crystal Silicon

doi: 10.13433/j.cnki.1003-8728.20180030

1.
School of Machinery and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048, China

Received Date: 2017-06-06
Publish Date: 2018-08-05

Abstract

Abstract

It is difficult to obtain an effective mathematical model for cutting mechanism by using theoretical analysis. This paper introduces the experimental method of central composite design (CCD), and establishes the experimental scheme of four factors and three levels for single-crystal Silicon wire cutting. The second order mathematical model for single-crystal Silicon surface roughness and material removal rate, such as no-load voltage, pulse width, pulse interval and wire speed, was established by using response surface methodology (RSM). The results show that the prediction model has good fittness and adaptability. Non-dominated sorting genetic algorithm Ⅱ (NSGA-Ⅱ) is used to solve the optimization problem, and the optimal Pareto solution set is obtained. The optimization of the process parameters is carried out to improve the processing quality and material removal rate of the surface of single-crystal Silicon. Experiments show that the present model is accurate for predicting the surface roughness and material removal rate, and which can realize the prediction of roughness and material removal rate during the wire cutting of the corresponding semiconductor materials.
- single-crystal silicon,
- RSM,
- surface roughness,
- material removal rate,
- NSGA-Ⅱ

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References(18)

References

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