Definition and Experimental Research on Electrical Discharge Machining Conditions of Single Crystal Silicon
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摘要: 针对某类牌号的单晶硅材料在放电加工系统中无法实现放电的问题，本文提出一种单晶硅放电加工临界电导率σ的界定方法，系统性地揭示了单晶硅的电导率σ是影响放电通道击穿并形成火花放电的根本原因。结合半导体物理理论，系统性地分析了单晶硅放电加工系统中从极间电场的建立到极间等离子体放电通道的形成过程；引入阴极场致电子发射理论，建立了单晶硅放电加工系统极间电流密度J与单晶硅电导率σ的物理模型，仿真分析了临界电流密度J与单晶硅电导率σ之间的关系；结合实际加工过程对模型进行了验证，验证结果表明该模型可确定单晶硅放电加工的临界电导率，以此界定单晶硅的可加工性。Abstract: Aiming at the problem that certain brand of single crystal silicon materials cannot achieve discharge in electrical discharge machining systems, this paper proposes a method to define the critical conductivity σ of single crystal silicon electrical discharge machining, and systematically reveals that the conductivity σ of single crystal silicon is the fundamental reason that affects the breakdown of the discharge channel and forms the spark discharge. Based on the theory of semiconductor physics, the process from the establishment of the inter-electrode electric field to the formation of the inter-electrode plasma discharge channel in electrical discharge machining system of the single crystal silicon is systematically analyzed. Introducing the cathode field electron emission theory, the physical model between the electrodes current density J of the single crystal silicon electrical discharge machining system and the single crystal silicon conductivity σ is established. The relationship between the critical current density J and the conductivity σ of single crystal silicon is simulated and analyzed. The model was verified by the actual machining process, the results show that the model can determine the critical conductivity of the electrical discharge machining of single crystal silicon, thus defining the machinability of single crystal silicon.
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表 1 模型参数
参数 数值 参数 数值 q 1.602×10−19 C pi 1.5×1010 cm−3 μn 90 cm2/（V·s） U 100 V T 300 K r 1 μm k0 1.3806505×1023 J/K χ 4.05 eV a 0.51 μm−1 Ec 1.12 eV 
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