金掺杂氧化铪薄膜的电阻转变性能研究

陈曦; 谭婷婷; 郭婷婷; 刘正堂

doi:10.13433/j.cnki.1003-8728.2015.0729

金掺杂氧化铪薄膜的电阻转变性能研究

doi: 10.13433/j.cnki.1003-8728.2015.0729

1.
西北工业大学材料学院, 西安 710072

基金项目:

国家自然科学基金项目（51202196）与西北工业大学中央高校基本科研业务费（3102014JCQ01032）资助

详细信息

作者简介:
陈曦（1991-），硕士，研究方向为氧化铪薄膜的电阻转变性能研究，chenx91@qq.com

通讯作者:
刘正堂，教授，博士生导师，liuzht@nwpu.edu.cn

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- 被引次数: 0
出版历程
- 收稿日期: 2014-01-06
- 刊出日期: 2015-07-05

Investigation of Resistive Switching Performance in Au-doped HfO2 Thin Film

1.
School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

摘要

摘要: 采用射频磁控溅射法在ITO基底上制备了HfO2和HfO2：Au薄膜，并对Cu/HfO2/ITO和Cu/HfO2：Au/ITO 三明治结构进行了电阻转变性能测试。结果表明：两者均展现出可逆双极电阻转变性能，但Cu/HfO2：Au/ITO器件的SET电压较小，电压分布更加集中并且性能更稳定。通过对器件双对数I-V曲线拟合分析，发现其电阻转变机制为空间电荷限制电流效应。金的掺入增加了薄膜中的缺陷，提高了基于氧空位的导电通道的均一性，从而优化了器件的电阻转变性能。
- 金掺杂 /
- 氧化铪薄膜 /
- 电阻转变
Abstract: HfO2 film and HfO2:Au film are deposited on ITO substrates with reactive sputtering, and the resistive switching properties of Cu/HfO2/ITO and Cu/HfO2:Au/ITO sandwich structures are investigated. Both devices exhibit bipolar resistive switching behavior. Enhanced performances are achieved in the Cu/HfO2:Au/ITO, including low set voltages and improved uniformity of switching parameters. The switching mechanism of the devices is space charge limited current according to the fitting of the double-log I-V curves. The performance improvement in Cu/HfO2:Au/ITO is clarified to defects and uniform oxygen vacancy conducting filaments induced by Au doping.
- argon /
- bias voltage /
- defects

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参考文献(15)

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