Multiple Objective Optimization for SiC Single Crystal Wafers Cutting Process Based on Response Surface Method
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摘要: SiC单晶体是一种高硬度、高脆性的难加工材料,其切割过程中的工艺参数对切割表面质量、锯切力以及线锯使用寿命有重要的影响。以线锯速度、工件进给速度和工件转速为设计因子进行三因子三水平的中心复合试验设计,采用响应曲面法对试验结果进行分析,分别建立表面粗糙度、锯切力和线锯寿命的响应面模型,获得了三个单目标优化的切割工艺参数。同时根据响应面模型,建立了表面粗糙度、锯切力和线锯寿命同时达到均衡优化的模型,根据满意度函数方法,得到最佳的切割工艺参数。多目标优化结果表明:当SiC切片表面粗糙度的预测值为0.6951μm,锯切力预测值为2.66515N,线锯寿命预测值为519.87min时,获得了最佳的切割工艺参数。
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关键词:
- SiC单晶体 /
- 响应曲面法(RSM) /
- 多目标优化 /
- 工艺参数优化
Abstract: SiC single crystal has high hardness and brittleness, therefore being difficult to machine. Its technical parameters in the process of cutting are vitally important for the surface quality, cutting force, and the life of a wire saw when the SiC single crystal wafer is machined. This paper uses the velocity of the wire saw, the feeding velocity of workpiece and its rotational speed as the design factors and designs the three-factor and three-level central composite experiment. The response surface method is used to analyze the test results; the response surface models of the surface roughness of the wafer, cutting force and the life of the wire saw are established respectively, and the cutting parameters such as surface roughness, cutting force and wire saw life optimization are obtained separately. According to the response surface models, the multiple-objective optimization models for surface roughness, cutting force and wire saw life are built respectively to reach equilibrium optimization; the desirability function method is used to obtain their reasonable cutting parameters. The multiple-objective optimization results show that when the surface roughness of the SiC single crystal wafer is 0.6951μm, the cutting force is 2.66515N and the wire saw life is 519.87min utes. Through the multiple-objective optimization, the reasonable cutting parameters are obtained.-
Key words:
- cutting /
- design of experiments /
- diamond cutting tolls /
- mathematical models
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[1] Neudeck P G. Progress in silicon carbide semiconductor electronics technology[J]. Journal of Electronic Materials,1995,(24): 283-288 [2] 王利杰, 冯玢, 洪颖等. 3 英寸半绝缘 4H-SiC 单晶的研制[J]. 半导体材料,2011,36(1): 8-10 Wang Lijie, Feng Fen, Hong Y, et al. Bulk growth of the semi-insulating 3-inch 4H-SiC [J]. Semiconductor Technology,2011,36(1): 8-10 (in Chinese) Ohata T, Nakamura Y, Nakamachi E. Development of optimum process design system for sheet fabrication using response surface method[J]. Journal of Materials Processing Technology,2003,144(1): 667-672[4] Douglas C. Montgomery, design and analysisi of experiments[M]. Posts and Telecom Press,2009 [3] Bidiville A, Neulist I, Wasmer K, et al. Effect of debris on the silicon wafering for solar cells[J]. Solar Energy Materials and Solar Cells,2011,95(8): 2490-2496 [4] Funke C, Wolf S, Stoyan D. Modeling the tensile strength and crack length of wire-sawn silicon wafers [J]. Journal of Solar Energy Engineering, 2009, 131 (1): 11-12 [5] Li W C, Tsai D M. Automatic saw-mark detection in multicrystalline solar wafer images[J]. Solar Energy Materials and Solar Cells,2011,95(8): 2206-2220 [6] Liedke T, Kuna M. A macroscopic mechanical model of the wire sawing process[J]. International Journal of Machine Tools and Manufacture,2011,51(9): 711-720 [7] Yu X, Wang P, Li X, et al. Thin czochralski silicon solar cells based on diamond wire sawing technology [J]. Solar Energy Materials and Solar Cells,2012,98: 337-342 [8] Wu H, Melkote S N. Study of ductile-to-brittle transition in single grit diamond scribing of silicon: application to wire sawing of silicon wafers[J]. Journal of Engineering Materials and Technology, 2012, 134 (4): 041011 [9] Lee S H. Analysis of ductile mode and brittle transition of AFM nanomachining of silicon [J]. International Journal of Machine Tools and Manufacture,2012,61: 71- 79 [10] Cvetkovic ' S, Morsbach C, Rissing L. Ultra-precision dicing and wire sawing of silicon carbide (SiC) [J]. Microelectronic Engineering,2011,88(8): 2500-2504 [11] Patten J, Gao W, Yasuto K. Ductile regime nanomachining of single-crystal silicon carbide[J]. Journal of Manufacturing Science and Engineering, 2005, 127 (3): 522 [12] Hardin C W, Qu J, Shih A J. Fixed abrasive diamond wire saw slicing of single-crystal silicon carbide wafers[J]. Materials and Manufacturing Processes,2004,19(2): 355-367 [13] Godfrey O U, Kumar S. Response surface methodologybased approach to CNC drilling operations[J]. Journal of Materials Processing Technology,2006,171: 41-47 VGiovanni M. Response surface methodology and product optimization[J]. Food Technology, 1983, 37 (11): 41-45 [14] Palanikumar K, Muthukrishnan N, Hariprasad K S. Surface roughness parameters optimization in machining A356 /SiC /20p metal matrix composites by PCD tool using response surface methodology and desirability function[J]. Machining Science and Technology,2008,12: 529-545 [15] 梁永收, 史耀耀,任军学,等.基于响应曲面法的GH4169 铣削力预测模型研究[J]. 机械科学与技术, 2010,29(11): 1547-1552 Liang Y S,Shi Y Y, Ren J X, et al. Prediction model of GH4169 milling force by response surface methodology[J]. Mechanical Science and Technology, 2010, 29 (11): 1547-1552 (in Chinese) [16] 贺连芳,赵国群,李辉平, 等. 基于响应曲面方法的热冲压硼钢 B1500HS 淬火工艺参数优化木[J]. 机械工程学报,2011,47(8): 77-82 He L F, Zhao G Q, Li H P, et al. Optimization of quenching parameters for hot stamping boron steel B1500HS based on response surface methodology[J]. Journal of Mechanical Engineering, 2011, 47 (8): 77-82 (in Chinese) [17] 袁人炜,陈明,曲征洪, 等. 响应曲面法预测铣削力模型及影响因素的分析[J]. 上海交通大学学报,2001, 35 (7): 1040-1045 Yuan R W, Chen M, Qu Z H, et al. Milling force prediction and analysis using statistics method[J]. Journal of Shanghai Jiaotong University, 2001, 35 (7): 1040- 1045 (in Chinese)
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