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金掺杂氧化铪薄膜的电阻转变性能研究

陈曦 谭婷婷 郭婷婷 刘正堂

陈曦, 谭婷婷, 郭婷婷, 刘正堂. 金掺杂氧化铪薄膜的电阻转变性能研究[J]. 机械科学与技术, 2015, 34(7): 1114-1116. doi: 10.13433/j.cnki.1003-8728.2015.0729
引用本文: 陈曦, 谭婷婷, 郭婷婷, 刘正堂. 金掺杂氧化铪薄膜的电阻转变性能研究[J]. 机械科学与技术, 2015, 34(7): 1114-1116. doi: 10.13433/j.cnki.1003-8728.2015.0729
Chen Xi, Tan Tingting, Guo Tingting, Liu Zhengtang. Investigation of Resistive Switching Performance in Au-doped HfO2 Thin Film[J]. Mechanical Science and Technology for Aerospace Engineering, 2015, 34(7): 1114-1116. doi: 10.13433/j.cnki.1003-8728.2015.0729
Citation: Chen Xi, Tan Tingting, Guo Tingting, Liu Zhengtang. Investigation of Resistive Switching Performance in Au-doped HfO2 Thin Film[J]. Mechanical Science and Technology for Aerospace Engineering, 2015, 34(7): 1114-1116. doi: 10.13433/j.cnki.1003-8728.2015.0729

金掺杂氧化铪薄膜的电阻转变性能研究

doi: 10.13433/j.cnki.1003-8728.2015.0729
基金项目: 

国家自然科学基金项目(51202196)与西北工业大学中央高校基本科研业务费(3102014JCQ01032)资助

详细信息
    作者简介:

    陈曦(1991-),硕士,研究方向为氧化铪薄膜的电阻转变性能研究,chenx91@qq.com

    通讯作者:

    刘正堂,教授,博士生导师,liuzht@nwpu.edu.cn

Investigation of Resistive Switching Performance in Au-doped HfO2 Thin Film

  • 摘要: 采用射频磁控溅射法在ITO基底上制备了HfO2和HfO2:Au薄膜,并对Cu/HfO2/ITO和Cu/HfO2:Au/ITO 三明治结构进行了电阻转变性能测试。结果表明:两者均展现出可逆双极电阻转变性能,但Cu/HfO2:Au/ITO器件的SET电压较小,电压分布更加集中并且性能更稳定。通过对器件双对数I-V曲线拟合分析,发现其电阻转变机制为空间电荷限制电流效应。金的掺入增加了薄膜中的缺陷,提高了基于氧空位的导电通道的均一性,从而优化了器件的电阻转变性能。
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出版历程
  • 收稿日期:  2014-01-06
  • 刊出日期:  2015-07-05

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